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ON Semiconductor )
High Voltage Power Transistor
Isolated Package Applications
Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
MJF47
NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS
* * * * * *
Electrically Similar to the Popular TIP47 250 VCEO(sus) 1 A Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation
1 2 3
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE
III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I II I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB Value 250 350 5 Unit Vdc Vdc Vdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Fig. 10 Test No. 2 Per Fig. 11 Test No. 3 Per Fig. 12 VISOL 4500 3500 1500 1 2 VRMS Collector Current -- Continuous Peak Base Current IC IB Adc Adc 0.6 Total Power Dissipation* @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD 28 0.23 Watts W/_C Watts W/_C _C 2 0.016 Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol RJA
Max
Unit
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case*
62.5 4.4
_C/W _C/W
RJC
Lead Temperature for Soldering Purpose TL 260 _C *Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 3
Publication Order Number: MJF47/D
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
(1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)
Base-Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc)
DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 350 Vdc, VBE = 0)
Collector Cutoff Current (VCE = 150 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
100
200
10
20
60 40
6 4
2 0.02
TJ = 150C
-55C
0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS)
25C
Figure 1. DC Current Gain
Characteristic
TYPICAL CHARACTERISTICS
VCE = 10 V
1
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MJF47
2 0.2 0.4 0.8 1.2 0.6 1.4 1 0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) VCEO(sus) VBE(sat) @ IC/IB = 5 VCE(sat) VBE(on) Symbol ICEO IEBO ICES VCE(sat) @ IC/IB = 5 V hFE fT VBE(on) @ VCE = 4 V TJ = 25C Min 250 10 30 10 -- -- -- -- -- Max 150 -- 1.5 0.1 0.2 -- -- 1 1
Figure 2. "On" Voltages
1 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc -- 2
MJF47
1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS) 1 2 td tr TJ = 25C VCC = 200 V IC/IB = 5 t, TIME ( s) 5 2 1 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 2 tf ts TJ = 25C VCC = 200 V IC/IB = 5
t, TIME ( s)
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) APPROX +11 V Vin t2 TURN-OFF PULSE
VCC
RC SCOPE RB Cjd << Ceb
Vin t1 t3 t1 7 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2% APPROX -9 V 51
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 5. Switching Time Equivalent Circuit
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (msec) 100 200 300 500 1K 2K 3K 5K 10 K SINGLE PULSE RJC(t) = r(t) RJC RJC = 4.4C/W MAX TJ(pk) - TC = P(pk) RJC(t)
Figure 6. Thermal Response
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MJF47
IC, COLLECTOR CURRENT (AMPS) 3 2 1 dc 500 s 1 ms 100 s
0.5 0.3 0.2 0.1
0.05 0.03 10
CURRENT LIMIT THERMAL LIMIT @ TC = 25C SECONDARY BREAKDOWN LIMIT 20 30 50 200 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150C. T J(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 7. Maximum Forward Bias Safe Operating Area
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
30
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
40
2
1.5
20
1
10
0.5
0
0
50
100
150
200
0
0
50
100
150
200
TC, CASE TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 8. Power Derating
Figure 9. Power Derating
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MJF47
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110" MIN MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK
HEATSINK
Figure 10. Clip Mounting Position for Isolation Test Number 1
Figure 11. Clip Mounting Position for Isolation Test Number 2
Figure 12. Screw Mounting Position for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 13. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
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MJF47
PACKAGE DIMENSIONS
CASE 221D-02 TO-220 TYPE ISSUE D
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
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Notes
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MJF47
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MJF47/D

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